Device manufacturing method and device, electro-optic device, and electronic equipment

ABSTRACT

A device manufacturing method, including: a first process for providing the plural elements on the original substrate via a separation layer in a condition where terminal sections are exposed to a surface on an opposite side to the separation layer; a second process for adhering the surface where the terminal sections of the elements to be transferred on the original substrate are exposed, via conductive adhesive, to a surface of the final substrate on a side where conductive sections for conducting with the terminal sections of the elements are provided; a third process for producing exfoliation in the separation layer between the original substrate and the final substrate; and a fourth process for separating the original substrate from which the transfer of elements has been completed, from the final substrate.

BACKGROUND OF THE INVENTION

[0001] Priority is claimed on Japanese Patent Application No.2003-15097, filed Jan. 23, 2003, the content of which is incorporatedherein by reference.

[0002] 1. Field of the Invention

[0003] The present invention relates to a manufacturing method for adevice which manufactures a device by transferring elements, a devicemanufactured by the method, an electro-optic device, and electronicequipment.

[0004] 2. Description of Related Art

[0005] Recently, for electro-optic devices such as liquid crystalelectro-optic devices, active matrix type devices which use thin filmelements such as thin film transistors (hereunder, TFT), thin filmdiodes (hereunder, TFD) or the like, have become the mainstream.However, regarding the conventional electro-optic devices furnished withamorphous silicon TFT or polycrystalline silicon TFT, manufacturing costper unit area is expensive. Hence, in the case where large electro-opticdevices are to be manufactured, a problem is that the cost becomes veryexpensive. One cause for this is the effective area utilization ratio ofthe transistor circuit on the substrate of the liquid crystalelectro-optic device is low, and wastage of the thin film elementconstituent material which forms the film is considerable. That is tosay, in the case where amorphous silicon TFT or polycrystalline siliconTFT are to be formed on the substrate by the conventional techniques,after film-forming the amorphous silicon on one side by CVD or the like,the unnecessary parts are removed by etching. However, the TFT circuitarea inside the pixel area is only from a few % to several 10% and thethin film element constituent material which is film-formed on the restof pixel electrode part is discarded by etching. In cases where it ispossible to effectively manufacture only the TFT circuit section on thesubstrate, it is possible to greatly reduce the cost, especially oflarge electro-optic devices. Therefore various techniques have beenstudied.

[0006] Conventionally, as a technique for arranging an LSI circuit whichis manufactured on a silicon wafer, onto another substrate, a so calledmicrostructure method developed by Alien Technology Co. is well known(for example, refer to the Information DISPLAY, Vol. 15, No. 11(November 1999)).

[0007] The microstructure technique is characterized in that it involvesseparating LSI circuits manufactured on a silicon wafer into microchips(=microstructures), and then pouring solvent dispersed with themicrostructures onto a substrate previously patterned with holes forfilling, so that the microstructures are arranged at predeterminedpositions on the substrate. According to this microstructure technique,microstructures which are formed in a large number on a silicon wafercan be dispersingly arranged on a substrate. Moreover, since this givesa discrete type arrangement where unit elements are separated on thesubstrate, the ability to follow the curvature and bending of thesubstrate is excellent, so that it is applicable to flexible substrates.

[0008] However, in the microstructure technique, there is the problem inthat reliable arrangement of the microstructures on the substrate andaccurate positioning are difficult. Moreover, since the directions inwhich the microstructures are arranged are random, special circuits tocope with this must be provided for the microstructures, with theproblem of incurring a cost increase. In the present state, this problemis avoided by designing the circuits on microstructures in four-waysymmetry.

[0009] Further, in the manufacture of color filters of liquid crystaldisplays, a method called an LITI process is well known, in which; adonor sheet formed by the sequential lamination of respective layers of;substrate/adhesion layer/optical absorption layer/protectivelayer/colored film layer/thermal melting adhesion layer, is superposedon an original substrate; the optical absorption layer is thenphotoirradiated for a partial area of the donor sheet; heat generatedhere melts and adheres the thermal melting adhesion layer; and as aresult only the photoirradiated area is transferred onto the substrate(for example, refer to the U.S. Pat. No. 6,057,067).

[0010] However, this conventional technique is used for manufacturingcolor filters or the like for liquid crystal display elements, and otherapplication possibilities have not been specified.

[0011] Furthermore, as a method for transferring a thin film elementsuch as a TFT or the like formed on a substrate, to a transfer body, thepresent applicant has developed and applied to patent, a transferringmethod for a thin film element, which is characterized in having; aprocess for forming a separation layer on a substrate of highreliability and which can transmit laser light; a process for forming atransfer layer containing a thin film element on the separation layer; aprocess for adhering the transfer layer containing the thin film elementto the transfer body via an adhesion layer; a process forphotoirradiating the separation layer and generating exfoliation in thelayer and/or on interface of the separation layer; and a process forseparating the substrate from the separation layer (refer to theJapanese Pat. Application No. Hei 10-125931).

[0012] Likewise, the present applicant has developed and applied topatent a method for transferring a thin film element, which ischaracterized in having: a first process for forming a first separationlayer on a substrate; a second process for forming a transfer layercontaining a thin film device on the first separation layer; a thirdprocess for forming a second separation layer on the transfer layer; afourth process for adhering a primary transfer body on the secondseparation layer, a fifth process for removing the substrate from thetransfer layer with the first separation layer made a border, a sixthprocess for adhering a secondary transfer body on the undersurface ofthe transfer layer, and a seventh process for removing the primarytransfer body from the transfer layer with the second separation layermade a border; and the transfer layer containing the thin film device istransferred to the secondary transfer body (refer to the Japanese PatentApplication No. Hei 11-26733).

[0013] According to these transferring techniques, it is possible totransfer a detailed and high performance functional device onto adesired substrate.

[0014] However, the conventional transfer techniques have the followingproblems.

[0015] That is to say, since the conventional transfer techniques are totransfer all of the thin film elements such as TFTs which are formed onthe substrate onto the final substrate, then as with an active matrixsubstrate for electro-optic devices, a large number of TFTs arerequired. However, in order to manufacture a substrate for which thearranged area of the TFTs is small with respect to the whole substratearea, it is necessary to specially manufacture a substrate where a largenumber of TFTs are formed at the same intervals as for the finalsubstrate, and transfer these to the final substrate, or it is necessaryto repeat the transfer many times, which does not always give areduction in cost.

[0016] Further, since the conventional transfer techniques are totransfer all the thin film elements such as TFTs which are formed on thesubstrate onto the final substrate, then the larger the area of thesubstrate, the higher the characteristic required for the irradiatinglaser light, that is, the higher the power and uniformity, so that itbecomes difficult to obtain a laser light source which satisfies therequired performance, and large sized highly accurate irradiationequipment becomes necessary for the laser light irradiation. Inaddition, when irradiating a high power laser light, the thin filmelements may be heated above their heat resistant critical temperature,so that the function of the thin film element itself may be lost. Hence,there is the problem that the transfer process itself becomes difficult.

[0017] Furthermore, similarly to the conventional transfer techniques,in the case where the thin film elements formed on the substrate aretransferred for each device, for example, an insulating film iscontinuously formed over the whole surface of the thin film element.Therefore cracking may occur when the final substrate is bent after thetransfer, and the ability to follow the bending of the substrate is notgood. As a result, in the conventional transfer techniques, the degreeof freedom for selecting the final substrate is limited.

SUMMARY OF THE INVENTION

[0018] The present invention takes into consideration the abovesituation with the object of providing, a manufacturing method for adevice which enables the manufacture of a device effectively at lowcost, by dispersingly arranging elements such as TFTs on a finalsubstrate which becomes an active matrix substrate for an electro-opticdevice, and a device which can be manufactured effectively at low price,and an electro-optic device and electronic equipment equipped with sucha device.

[0019] In order to achieve the above object, a manufacturing method fora device of the present invention, in which some or all of pluralelements formed on an original substrate are transferred to a finalsubstrate, and some or all of the transferred elements are used tomanufacture the device, including: a first process for providing theplural elements on the original substrate via a separation layer in acondition where terminal sections are exposed to a surface on anopposite side to the separation layer; a second process for adhering thesurface where the terminal sections of the elements to be transferred onthe original substrate are exposed, via conductive adhesive, to asurface of the final substrate on a side where conductive sections forconducting with the terminal sections of the elements are provided; athird process for producing exfoliation in the separation layer betweenthe original substrate and the final substrate; and a fourth process forseparating the original substrate from which the transfer of elementshas been completed, from the final substrate.

[0020] According to the manufacturing method for a device of the presentinvention, it is possible to concentratedly manufacture, for example onthe original substrate, the many elements which are to be dispersinglyarranged at intervals on the final substrate. Hence, compared to thecase where elements are directly formed on the final substrate, it ispossible to greatly increase the area efficiency of the substrate whenmanufacturing elements. Consequently, it becomes possible to manufactureeffectively and at low cost, a final substrate where many elements aredispersingly arranged. As a result, the device itself can be effectivelymanufactured at low cost.

[0021] Moreover, it possible to easily execute prior to transfer,selection and removal of bad quality elements from the many elementswhich are concentratedly arranged on the original substrate. As aresult, product yield rate can be increased.

[0022] Since the surface where the terminal sections of the elements areexposed is adhered via the conductive adhesive to the final substrate,then for example, by directly adhering the conductive adhesive to theconductive sections on the final substrate, adhesion of the elements tothe final substrate and conducting the terminal sections with theconductive sections can be performed at the same time. Hence, theprocess for terminal sections of the element are exposed, or to theposition to be connected to the terminal sections on the surface of thefinal substrate on the side where the conductive sections are provided.

[0023] In this manner, since this is film-like adhesive, it becomes easyto handle the conductive adhesive, and hence productivity can beincreased.

[0024] In the manufacturing method, preferably in the second process,the conductive adhesive is provided between the elements and the finalsubstrate in liquid form, and then cured.

[0025] In this manner, the degree of freedom in selecting theapplication method; such as for example overall coating by spin coating,selective coating by a liquid droplet discharge method, or variousprinting methods, is higher, so that it becomes possible to select thesuitable application method corresponding to the type of element.

[0026] In the case where the conductive adhesive is liquid form,preferably the conductive adhesive is selectively arranged by a liquiddroplet discharge method.

[0027] In this manner, since the conductive adhesive can be arranged atonly the desired position, then for example, by arranging the conductiveadhesive only at the places corresponding to the elements to betransferred, loss of the adhesive can be reduced. Moreover, transfer ofthe elements to the final substrate can be done easily.

[0028] Preferably in the case where the conductive adhesive isselectively arranged by the liquid droplet discharge method, prior tothis, the position where the conductive adhesive for the elements or forthe final substrate is arranged is subjected to a lyophilic treatment,and/or the surroundings of the position where the conductive adhesive isarranged is subjected to a liquid repellent treatment.

[0029] In this way, even in the case where the droplets are discharged,shifted from the desired position, due to the liquid repellenttreatment, the droplets are repelled to the conducting the terminalsections with the conductive sections by wiring after transferringbecomes unnecessary.

[0030] Furthermore, it is possible to laminate and unite the same ordifferent elements. Therefore, by uniting the elements manufacturedunder different process conditions, an element having a laminatedstructure which is conventionally difficult to manufacture can beprovided, and an element having a three-dimensional structure can beeasily manufactured.

[0031] Furthermore, in the manufacturing method, preferably the originalsubstrate is a substrate for forming elements.

[0032] In this manner, when forming elements on the original substrate,the terminal sections thereof may be arranged on the opposite side tothe original substrate, that is, the outer side. Hence, it becomes easyto form the terminal sections.

[0033] In the manufacturing method, preferably the conductive adhesiveis an anisotropic conductive adhesive.

[0034] In this manner, for example, in the case where there are pluralterminal sections of the elements, and the conductive sections arerespectively conducted to these terminal sections, the terminal sectionsand the corresponding conductive sections are arranged to oppose eachother, and are adhered by the anisotropic conductive adhesive, andpressed, so that the anisotropic conductive adhesive can demonstrate theanisotropy thereof and conduct only between the opposing terminalsections and conductive sections. Hence, it is not necessary to form theconductive adhesive in a condition of independence for each of therespective terminal sections. As a result, productivity is extremelygood.

[0035] In the case where the conductive adhesive is an anisotropicconductive adhesive, then preferably in the second process, film-likeadhesive is used as the conductive adhesive, and this film-like adhesiveis formed on the surface on the side where the desired position, and asa result are applied to the desired position. Furthermore, the dropletsdischarged to the desired position, due to the lyophilic treatment, stayin that position and do not flow to the surroundings.

[0036] Preferably in the case where the conductive adhesive isselectively arranged by the liquid droplet discharge method, prior tothis, a partition is formed to enclose the position where the conductiveadhesive for the elements or for the final substrate is arranged, andthen, the conductive adhesive is selectively arranged within thepartition.

[0037] In this manner, by arranging the conductive adhesive bydischarging within the partition, the conductive adhesive can be morereliably applied to the desired position.

[0038] In the case where the conductive adhesive is selectively arrangedby the liquid droplet discharge method, prior to this, it is preferableto form a concavity at a junction position of the elements with thefinal substrate, and then to selectively arrange the conductive adhesivein the concavity.

[0039] In this manner, by arranging the conductive adhesive bydischarging into the concavity, the conductive adhesive can be morereliably applied to the desired position. Furthermore, for example, inthe case where the concavity is formed in a shape to fit the element,then by fitting the element to the concavity, positioning is possiblewhen adhering the original substrate and the final substrate. Hence,positioning when adhering the substrates can be easily and accuratelyperformed. Furthermore, by fitting the element into the concavity, it ispossible to thin the substrate where the elements are mounted (the finalsubstrate).

[0040] In the case where a concavity is formed at the junction positionof the element with the final substrate, and the conductive adhesive isthen selectively arranged in the concavity, it is preferable to providebeforehand in the concavity, conductive sections for conducting with theterminal sections of the elements.

[0041] In this manner, adhering the elements to the final substrate, andconducting the terminal sections with the conductive sections can beperformed at the same time. Hence, the process after transferring, forconducting the terminal sections with the conductive sections by wiringbecomes unnecessary.

[0042] In the manufacturing method, in a case where there are pluralterminal sections of the elements, it is preferable to form theconductive adhesive to be formed on these terminal sections in acondition of independence for each of the respective terminal sections,and to insulate between the independent conductive adhesives.

[0043] In this manner, even if the conductive adhesive is not ananisotropic conductive adhesive but a general one, short-circuitsbetween the terminal sections by the conductive adhesive can beprevented.

[0044] The device of the present invention is characterized in that, ina device including elements provided on a substrate, terminal sectionsare provided in an exposed condition on a surface of the elements on thesubstrate side, and conductive sections for conducting with the terminalsections of the elements are provided on the surface of the substrate onthe side where the elements are provided; and the elements are adheredto the substrate by a conductive adhesive which conducts between theterminal sections and the conductive sections.

[0045] According to this device, since the surface where the terminalsections of the elements are exposed, is adhered via the conductiveadhesive to the conductive sections on the substrate, then at the timeof manufacture, a process for mounting the elements on the substrate anda process for conducting the terminal sections of elements with theconductive sections of the substrate are performed at the same time.Therefore, a process after mounting for conducting the terminal sectionswith the conductive sections by wiring becomes unnecessary, giving highproductivity.

[0046] In the device, preferably the conductive adhesive is ananisotropic conductive adhesive.

[0047] In this manner, for example, in the case where there are pluralterminal sections of the elements, and the conductive sections arerespectively conducted with these terminal sections, the terminalsections and the corresponding conductive sections are arranged tooppose each other, and are adhered by the anisotropic conductiveadhesive, and pressed, so that the anisotropic conductive adhesive candemonstrate the anisotropy thereof and conduct only between the opposingterminal sections and conductive sections. Hence, it is not necessary toform the conductive adhesive in a condition of independence for each ofthe respective terminal sections. As a result, productivity is extremelygood.

[0048] Moreover, preferably in the device there are plural terminalsections of the elements, and the conductive adhesives to be formed onthese terminal sections are formed in a condition of independence foreach of the respective terminal sections, and between the independentconductive adhesives is insulated.

[0049] In this manner, even if the conductive adhesive is not ananisotropic conductive adhesive but a general one, short-circuitsbetween the terminal sections by the conductive adhesive can beprevented.

[0050] In the case where the conductive adhesive to be formed on theterminal sections is formed in a condition of independence for each ofthe respective terminal sections, and between the independent conductiveadhesives is insulated, it is preferable that the conductive adhesivesare in the independent condition by arranging these conductive adhesivesseparated for each of the respective terminal sections, and between theconductive adhesives is insulated.

[0051] In this manner, short-circuits between the terminal sections bythe conductive adhesive can be reliably prevented.

[0052] Moreover, in the case where the conductive adhesive to be adheredto the terminal sections is formed in a condition of independence foreach of the respective terminal sections, and between the independentconductive adhesives is insulated, it is preferable that the conductiveadhesives are in the independent condition for each of the respectiveterminal sections by separating by an insulative partition, and betweenthe conductive adhesives is insulated.

[0053] In this manner, short-circuits between the terminal sections bythe conductive adhesive can be reliably prevented.

[0054] Furthermore, in the case where the conductive adhesive to beadhered to the terminal sections is formed in a condition ofindependence for each of the respective terminal sections, and betweenthe independent conductive adhesive is insulated, it is preferable thatthe conductive adhesives are in the independent condition for each ofthe respective terminal sections by arranging into respectivelyindependent concavities, and between the conductive adhesives isinsulated.

[0055] In this manner, short-circuits between the terminal sections bythe conductive adhesive can be reliably prevented.

[0056] Moreover, the device of the present invention is characterized inbeing obtained by the manufacturing methods according to any one of theabove aspects.

[0057] According to this device, it is manufactured effectively at lowcost, and product yield rate is also increased.

[0058] The electro-optic device of the present invention ischaracterized in being equipped with the aforementioned device.

[0059] According to this electro-optic device, the device ismanufactured effectively at low cost and product yield rate is alsoincreased, so that the electro-optic device itself is also manufacturedat low cost.

[0060] The electronic equipment of the present invention ischaracterized in being equipped with the aforementioned device.

[0061] According to this electronic equipment, the device ismanufactured effectively at low cost and product yield rate is alsoincreased, so that the electronic equipment itself is also manufacturedat low cost.

[0062] As described above, according to the manufacturing method for adevice of the present invention, plural elements which are to bedispersingly arranged at intervals on the final substrate areconcentratedly manufactured on the original substrate. Therefore,devices can be manufactured effectively at low cost.

[0063] Moreover, the plural elements which are concentratedlymanufactured on the original substrate can be easily selected andremoved before the transfer. As a result, product yield rate can beincreased.

[0064] Furthermore, since the surface where the terminal sections of theelements are exposed is adhered via the conductive adhesive to the finalsubstrate, then for example, by directly adhering the conductiveadhesive to the conductive sections on the final substrate, adhesion ofthe elements to the final substrate and conducting the terminal sectionswith the conductive sections can be performed at the same time. Hence,the process for conducting the terminal sections with the conductivesections by wiring after transferring is obviated, enablingsimplification of the processes and an increase in productivity.

[0065] Moreover, an element having a laminated structure which isconventionally difficult to manufacture can be provided, and an elementhaving a three-dimensional structure can be easily manufactured.

BRIEF DESCRIPTION OF THE DRAWINGS

[0066]FIG. 1 is an explanatory diagram of a first embodiment of a deviceof the present invention, and a side cross-section showing a firstprocess for forming a separation layer on an original substrate.

[0067]FIG. 2A to 2C are explanatory diagrams of a second process forforming many elements on a separation layer, FIG. 2A is a sidecross-section showing a condition where many elements are formed on theseparation layer, FIG. 2B is an enlarged side cross-section of a mainpart for describing another example of formation, and FIG. 2C is anenlarged side cross-section for showing a device.

[0068]FIG. 3A is a side cross-section showing a condition whereelectrode pads are formed on a final substrate, FIG. 3B is a sidecross-section showing a condition where wiring 30 is connected to theelectrode pads, and FIG. 3C is a bottom view schematically showing anarrangement of terminal sections of elements and the electrode pads.

[0069]FIG. 4 is a side cross-section showing a condition where afilm-like anisotropic conductive adhesive is adhered to a finalsubstrate.

[0070]FIG. 5 is a side cross-section showing a process for superposingthe original substrate on the final substrate and adhering them.

[0071]FIG. 6 is a side cross-section showing a process for producingexfoliation in a separation layer by partially irradiating light fromthe original substrate side.

[0072]FIG. 7 is a side cross-section showing a process for removing theoriginal substrate from the final substrate after transferring.

[0073]FIG. 8 is a schematic diagram for explaining a condition wheremany elements are transferred onto the final substrate.

[0074]FIG. 9 is a side cross-section showing a condition where film-likeanisotropic conductive adhesive is adhered only to the elementtransferring area of the final substrate.

[0075]FIG. 10 is a side cross-section showing a condition where liquidform anisotropic conductive adhesive is applied onto the whole surfaceof the final substrate by spin coating.

[0076]FIG. 11 is a side cross-section showing a condition where liquidform anisotropic conductive adhesive is arranged on the electrode padsof the final substrate by a liquid droplet discharge method.

[0077]FIGS. 12A and 12B are diagrams for explaining the schematicconfiguration of an inkjet head, FIG. 12A is a perspective view of themain parts and FIG. 12B is a side cross-section of the main parts.

[0078]FIG. 13A to 13C are side cross-sections for explaining a method ofapplying an anisotropic conductive adhesive using a stamper.

[0079]FIG. 14 is a side cross-section showing a condition where liquidform anisotropic conductive adhesive is arranged on the electrode padsof the final substrate using partitions, by a liquid droplet dischargemethod.

[0080]FIG. 15 is a side cross-section showing a condition where liquidform anisotropic conductive adhesive is arranged inside concavities inthe final substrate, by a liquid droplet discharge method.

[0081]FIG. 16 is a side cross-section showing a condition whereconductive adhesive is independently provided for the electrode padsformed on the final substrate.

[0082]FIG. 17 is a side cross-section showing a condition whereconductive adhesive is independently provided for the electrode padsformed on the final substrate by forming partitions.

[0083]FIG. 18 is a side cross-section showing a condition whereconductive adhesive is provided inside concavities formed in the finalsubstrate.

[0084]FIG. 19A to 19C are diagrams showing electronic equipment relatedto the present invention, FIG. 19A shows an example of a mobile phone,FIG. 19B shows an example of a portable information processor, and FIG.19C shows an example of a watch type electronic equipment.

DETAILED DESCRIPTION OF THE INVENTION

[0085] Hereunder is a description of embodiments of the presentinvention, with reference to the drawings.

[0086] (First Embodiment)

[0087]FIG. 1 to FIG. 7 are explanatory drawings of a first embodiment ofthe present invention (element transfer method). This element transfermethod is an example of where an anisotropic conductive adhesive film isspecifically used as a conductive adhesive, and is executed through thefollowing first process to fourth process.

[0088] [First Process]

[0089] In the first process, as shown in FIG. 1, a separation layer 11is formed on an original substrate 10, and furthermore, as shown in FIG.2A, many elements 12 are formed on the separation layer 11.

[0090] The original substrate 10 in the present embodiment, is asubstrate for element forming. Such an element forming substrate ispreferably one having transmittance that allows transmission of light.

[0091] In this case, the transmissivity of light is preferably more than10%, and more preferably more than 50%. If the transmissivity is toolow, the loss of light becomes large, and a larger quantity of light isrequired in order to exfoliate the separation layer 11.

[0092] Moreover, preferably the original substrate 10 is constructedfrom highly reliable material, specifically, it is preferablyconstructed from materials with superior heat resistance. The reason isthat for example, when forming an element 12 or intermediate layer 16described later, the process temperature may become high depending onthe type or formation method (for example, around 350 to 1000° C.).However, even in such a case, if the substrate 10 is superior in heatresistance, then when forming the element 12 on the original substrate10, the range of settings for the film forming conditions such as thetemperature conditions and the like, can be wider.

[0093] Therefore, if the maximum temperature when forming the element 12is Tmax, the original substrate 10 is preferably manufactured from amaterial with a distortion point greater than Tmax. Specifically, theconstituent material for the original substrate 10, preferably has adistortion point greater than 350° C., and more preferably has adistortion point greater than 500° C. As such materials, heat resistantglass such as quartz glass, Coming 7059, and OA-2 made by NipponElectric Glass Co. are given as examples.

[0094] The thickness of the original substrate 10 is not specificallylimited. However it is preferably around 0.1 to 5.0 mm, and morepreferably around 0.5 to 1.5 mm. If the thickness of the originalsubstrate 10 is too thin, the strength drops, while if too thick, thenin the case where the transmissivity of the original substrate 10 islow, attenuation of light can easily occur. In the case where thetransmissivity of the original substrate 10 is high, the thickness maybe greater than the aforementioned upper limit. In order to evenlyirradiate the light, the thickness of the original substrate 10 ispreferably uniform.

[0095] The separation layer 11 is formed by materials which easilyproduce exfoliation by the action of mechanical force. That is to say,it is formed by such materials that; when a force acting on theseparation layer 11 in a direction to separate the original substrate 10and a later described final substrate, is applied from one edge of thosesubstrates, it easily produces exfoliation in the layer and/or on theinterface of the separation layer 11 (hereunder, “internal exfoliation”and “interfacial exfoliation”).

[0096] Furthermore, such a separation layer 11 preferably has acharacteristic of absorbing irradiated light and producing exfoliationin the layer and/or on the interface, that is to say, internalexfoliation and/or interfacial exfoliation. Specifically, it is desiredthat the interatomic or intermolecular binding strength of theconstituent material of the separation layer 11 is eliminated or reducedby light irradiation, that is, ablation is produced ending in internalexfoliation and/or interfacial exfoliation.

[0097] Furthermore, in some cases gas will be released from theseparation layer 11 by the light irradiation, to manifest the separationeffect. That is to say, there is the case where an element contained inthe separation layer 11 becomes a gas and is released, and the casewhere the separation layer absorbs the light and instantly becomes a gasand the vapor thereof is released to contribute to the separation.

[0098] Examples of the constituent materials for the separation layer11, are those described in A-F hereunder.

[0099] A. Amorphous silicon (a-Si)

[0100] This amorphous silicon may contain hydrogen (H). In this case, itis preferable that the H content be approximately 2 atomic percent ormore, and more preferably 2 to 20 atomic percent. When a predeterminedamount of hydrogen (H) is contained in this manner, hydrogen is releasedby light irradiation and an internal pressure is generated in theseparation layer 11, becoming a force to separate the upper and lowerthin films. The hydrogen (H) content in the amorphous silicon can becontrolled by appropriately setting the film forming conditions, forexample, the gas composition, gas pressure, gas atmosphere, gas flowrates, temperature, substrate temperature and input power in the CVD.

[0101] B. Oxide ceramics, dielectrics (ferroelectrics) andsemiconductors, such as silicon oxides and silicates, titanium oxidesand titanates, zirconium oxide and zirconates, and lanthanum oxide andlanthanates. Examples of silicon oxides include SiO, SiO₂, and Si₃O₂,and examples of silicates include K₂SiO₃, Li₂SiO₃, CaSiO₃, ZrSiO₄, andNa₂SiO₃.

[0102] Examples of titanium oxides include TiO, Ti₂O₃, and TiO₂, andexamples of titanates include BaTiO₄, BaTiO₃, Ba₂Ti₉O₂₀, BaTi₅O₁₁,CaTiO₃, SrTiO₃, PbTiO₃, MgTiO₃, ZrTiO₂, SnTiO₄, Al₂TiO₅ and FeTiO₃.

[0103] Examples of zirconium oxides include ZrO₂, and examples ofzirconates include BaZrO₂, ZrSiO₄, PbZrO₃, MgZrO₃ and K₂ZrO₃.

[0104] C. Ceramics and dielectrics (ferroelectrics), such as PZT, PLZT,PLLZT, PBZT.

[0105] D. Nitride ceramics, such as silicon nitride, aluminum nitride,titanium nitride.

[0106] E. Organic Polymers:

[0107] Usable organic polymers have linkages (which are cut byirradiation of the light), such as —CH—, —CO— (ketone), —CONH— (amide),—NH— (imide), —COO— (ester), —N═N— (azo), —CH═N— (cis). In particular,any organic polymers having large numbers of such linkages can be used.The organic polymers may have aromatic hydrocarbons (one or more benzenerings or fused rings) in the chemical formulae.

[0108] Examples of the organic polymers include polyolefins, such aspolyethylene, and polypropylene; polyimides; polyamides; polyesters;polymethyl methacrylate (PMMA); polyphenylene sulfide (PPS); polyethersulfone (PES); and epoxy resins.

[0109] F. Metals

[0110] Examples of metals include Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd,Pr, Gd, Sm, and alloys containing at least one of these metals.

[0111] The thickness of the separation layer 11 depends on variousconditions, such as the purpose for exfoliation, the composition of theseparation layer 11, the layer configuration, and the method for formingthe layer. However, normally a thickness of around 1 nm to 20 μm ispreferable, more preferably around 10 nm to 2 μm, and even morepreferably around 40 nm to 1 μm. If the film thickness of the separationlayer 11 is too small, uniformity in deposition may be lost, andnonuniformity may occur in the separation. If the film thickness is toothick, then in order to maintain good peelability of the separationlayer 11, it is necessary to increase the power of light (quantity oflight), and when removing the separation layer 11 later, the operationtakes time. It is preferable that the thickness of the separation layer2 be as uniform as possible.

[0112] The method for forming the separation layer 11 is not limited,and is determined depending on several conditions, such as the filmcomposition and thickness. Examples of the methods include vapor phasedeposition processes, such as CVD (including MOCVD, low pressure CVD,ECR-CVD), evaporation, molecular beam (MB) evaporation, sputtering,ion-plating, and PVD; plating processes, such as electro-plating,dip-plating (dipping), and electroless-plating; coating process, such asa Langmuir-Blodgett process, spin-coating process, spray-coatingprocess, and roll-coating process; printing processes; transferprocesses; ink-jet processes; and powder-jet processes. A combination ofthese processes may also be used.

[0113] For example, when the separation layer 11 is composed ofamorphous silicon (a-Si), it is preferable that the layer be formed by aCVD process, specifically a low pressure CVD or plasma CVD process.

[0114] When the separation layer 11 is formed from a ceramic by asol-gel process, or formed from an organic polymer, it is preferablethat the layer be formed by a coating process, and particularly aspin-coating process. Further, although not shown in FIG. 1, dependingon the properties of the original substrate 10 and the separation layer11, an intermediate layer may be arranged between the original substrate10 and the separation layer 11 with an object of increasing the adhesionof both.

[0115] If the separation layer 11 is formed in this way, then as shownin FIG. 2A, many elements 12 are formed on the separation layer 11, andthen an etching process is performed so that the respective elements 12and the separation layer 11 immediately beneath remain as islands style.The result is such that, as shown in FIG. 2A, the many transferredlayers (elements 12) are arranged at predetermined intervals via theseparation layer 11 on the original substrate 10. In this manner, byforming the elements 12 being the transferred layers, and the separationlayer 11 as islands, it becomes easy to transfer only the desiredelements 12 in an exfoliation process described later.

[0116] The separation layer 11 divided for each of the respectiveelements 12, as shown in FIG. 2A, may be the same size as the separationlayer adhesion face of the element 12. However, it may be such that, asshown in FIG. 2B, the separation layer 11 is further over-etched so thatthe adhesion area of the separation layer 11 to the element 12 becomessmaller than the whole area of the separation layer adhesion face ofelement 12. In this manner, by over-etching the separation layer 11,then when the mechanical force is exerted on the separation layer 11,exfoliation is easily produced at the separation layer 11. Furthermoreas described later, when irradiating light as a pre-exfoliation process,exfoliation is easily produced. Moreover, by reducing the separationlayer 11, the amount of light energy required for exfoliation can bereduced.

[0117]FIG. 2C is a cross-section showing an example of the element 12used in the present embodiment. The element 12 is constructed to containfor example a TFT (thin film transistor) formed on an SiO₂ film(intermediate layer) 16. The TFT is equipped with a source and drainarea 17 formed by introducing an n-type impurity to the polysiliconlayer, a channel area 18, a gate insulating film 19, a gate electrode20, an interlayer insulating film 21, and a source electrode 22 anddrain electrode 22 composed of for example aluminum. Here, the elements12 in the present invention, as shown in FIG. 2C, are formed in acondition where the terminal sections of the respective electrodes areexposed to a surface 12 a on the opposite side to the separation layer11. That is to say, the gate electrode 20 is formed with one surface(the surface on the opposite side to the channel area 18) exposed to thesurface 12 a of the element 12, and the source and drain electrodes 22and 22 connecting to the source (or drain area) 17 are also formed withan end surface exposed to the surface 12 a of the elements 12. On theend surface side of the source and drain electrodes 22 and 22, in orderto sufficiently maintain the contact area of the conductive adhesivedescribed later, terminal sections 22 a and 22 a are formed in acondition with their surroundings exposed to the surface 12 a.Furthermore, the surface in the gate electrode 20 on the side exposed tothe surface 12 a, also becomes a terminal section 20 a in the presentinvention.

[0118] The element 12 it is not limited to a TFT, and various elementssuch as a silicon base transistor, an SOI (silicon on insulator) and thelike may be applied. However, in this case also, the terminal sectionssuch as the electrodes are in a condition exposed to the surface on theopposite side to the separation layer 11.

[0119] Moreover, in the present invention, as the intermediate layerprovided in contact with the separation layer 11, an SiO₂ film is used,however, other insulating films such as Si₃N₄ may be used. The thicknessof the SiO₂ film (intermediate layer) is adequately determinedcorresponding to the purpose for the formation, and the degree offunction to be demonstrated, however normally around 10 nm to 5 μm ispreferable, and 40 nm to 1 μm is more preferable. The intermediate layeris formed for various purposes, and functions as at least one of; aprotective layer for physically or chemically protecting the transferredlayer (element 12), an insulating layer, a conductive layer, a shadinglayer to laser light, a barrier layer for preventing migration, and areflection layer.

[0120] In some cases, the transferred layer (element 12) may be directlyformed on the separation layer 11, by omitting the formation of theinterlayer, such as the SiO₂ film.

[0121] The transferred layer (element 12) includes a thin film elementsuch as a TFT, as shown in FIG. 2C. As a thin film element, besides theTFT, there are for example: thin film diodes, photoelectric transducersincluding a PIN junction of silicon (photosensor, solar battery),silicon resistive elements, other thin film semiconductor devices,electrodes (for example; transparent electrodes such as ITO and mesafilm), switching devices, memories, actuators such as piezoelectricdevices, micromirrors (piezoelectric thin film ceramics), magneticrecording thin film heads, coils, inductors, thin film high permeabilitymaterials and micro-magnetic devices composed of combinations thereof,filters, reflection films, dichroic mirrors, and the like.

[0122] Such a thin film element (thin film device) is normally formed bya comparatively high process temperature due to the forming methodtherefor. Therefore, in this case, as described above, the substrate 10must be a highly reliable material which is resistant to this processtemperature.

[0123] [Second Process]

[0124] On the other hand, as shown in FIG. 3A, a final substrate 14 isprepared. The final substrate 14 is not specifically limited, and may bea substrate (plate material), specifically a transparent substrate. Sucha substrate may be flat or curved. Further, the final substrate 14 maybe inferior to the original substrate 10 in characteristics such as heatresistance, corrosion resistance, and the like. The reason is that;since in this embodiment, the elements 12 are formed on the originalsubstrate 10, and then the elements 12 are transferred to the finalsubstrate 14, the characteristics required for the final substrate 14,specifically heat resistance, are not dependent on the temperatureconditions when forming the elements 12.

[0125] Therefore, if the maximum temperature when forming the element 12is T max, a constituent for the final substrate 14 with a glasstransition point (Tg) or a softening point below T max can be used. Forexample, the final substrate 14 can be formed from a material with aglass transition point or softening point preferably below 800° C., morepreferably below 500° C., and even more preferably below 320° C.

[0126] As the mechanical characteristics of the final substrate 14, itis preferable to have a degree of rigidity (strength), however, it mayhave flexibility or elasticity.

[0127] As such a constituent for the final substrate 14, there arevarious synthetic resins or various glasses. In particular, varioussynthetic resins or normal (low melting point) low cost glass arepreferable.

[0128] Examples of synthetic resins include both thermoplastic resinsand thermosetting resins such as; polyolefins, e.g. polyethylene,polypropylene, ethylene-propylene copolymers, and ethylene-vinyl acetatecopolymers (EVAs); cyclic polyolefins; modified polyolefins; polyesterssuch as polyvinyl chloride, polyvinylidene chloride, polystyrene,polyamides, poly-imides, polyamide-imides, polycarbonates,poly-(4-methylpentene-1), ionomers, acrylic resins, polymethylmethacrylate, acrylic-styrene copolymer (AS resin), butadiene-styrenecopolymers, polio copolymers (EVOHs), polyethylene terephthalate (PET),polybutylene terephthalate (PBT), polycyclohexane terephthalate (PCT)and the like; polyethers, polyether-ketones (PEKs),polyether-ether-ketones (PEEKs), polyether-imides, polyacetals (POMs);polyphenylene oxides; modified polyphenylene oxides; polyalylates;aromatic polyesters (liquid crystal polymers), polytetrafluoroethylene,polyvinylidene fluoride, and other fluorine resins; variousthermoplastic elastomers such as styrene-, polyolefin-, polyvinylchloride-, polyurethane-, fluorine rubber-, chlorinatedpolyethylene-type, and the like; epoxy resins, phenol resins, urearesins, melamine resins, unsaturated polyesters, silicone resins,polyurethanes, and the like; and copolymers, blends, polymer alloysessentially consisting of these synthetic resins. One or more of thesesynthetic resins may be used in combination (for example, as a compositeconsisting of at least two layers).

[0129] Examples of glass include, silicate glass (quartz glass),alkaline silicate glass, soda-lime glass, potash lime glass, lead(alkaline) glass, barium glass, and borosilicate glass. All the types ofglass other than silicate glass have lower melting points than that ofsilicate glass. Moreover, they are comparatively easy to form andprocess, and inexpensive, and therefore preferable.

[0130] Furthermore, as the final substrate 14, at the positions thereonfor transferring the elements 12 to be transferred on the originalsubstrate 10, electrode pads 15 are formed beforehand as conductivesections in the present invention. The electrode pads 15 are forrespectively conducting with the terminal section 20 a, and the terminalsections 22 a and 22 a shown in FIG. 2C of the elements 12 formed on theoriginal substrate 10, and comprise electrode pads 15 a, 15 b and 15 cprovided at positions corresponding the respective terminal sections. Inthe present embodiment, as show in FIG. 3B, wiring 30 is also formed forconnecting to these electrode pads 15 a, 15 b and 15 c. Here, theelectrode pads 15 a, 15 b and 15 c, for example as shown in FIG. 3C, arearranged corresponding to the exposed terminal section 20 a of the gateelectrode 20, and the terminal sections 22 a and 22 a of the sourceelectrode 22 and drain electrode 22, in the elements 12.

[0131] Next, in this manner, to the final substrate formed with thewiring 30, as shown in FIG. 4, film-like anisotropic conductive adhesive31 is adhered as conductive adhesive to the formation surface of theelectrode pad 15. The film-like anisotropic conductive adhesive 31 isnot specifically limited, and various kinds can be used. Examplessuitable for use include, “3370C” made by Three Bond Co., Ltd.,“Anisorm” made by Hitachi Chemical Co., Ltd., and “CP9631SB” made bySony Chemical Corporation. The film-like anisotropic conductive adhesive31 is one where fine conductive particles are dispersed in an insulativeresin and formed into a film-like adhesive, and it is constituted so asto be cured by heat pressing. Regarding the film-like anisotropicconductive adhesive 31 based on such a constitution, when pressed thedispersed fine conductive particles become continuous in the directionof pressing, and consequently it attains conductivity in the directionof pressing. At this time, in the non pressing direction the fineconductive particles remain in the dispersed condition, and hence itremains insulating.

[0132] In this manner, after adhering the anisotropic conductiveadhesive 31 onto the final substrate 14, then as shown in FIG. 5, theoriginal substrate 10 is aligned relative to the final substrate 14, andadhered so that the element 12 side contacts with the anisotropicconductive adhesive 31. The alignment of the original substrate 10 tothe final substrate 14, is performed so that the elements 12 to betransferred are positioned on the electrode pads 15, more precisely, sothat the terminal sections 20 a, 22 a and 22 a of the element 12 arerespectively positioned immediately above the corresponding electrodepads 15 a (15 b, 15 c).

[0133] Then, by pressing one or both of the substrates in a direction toadhere to each other, and by heating in this condition, the anisotropicconductive adhesive 31 is cured. In the present embodiment, as shown inFIG. 5, the original substrate 10 side is pressed. When conducting thepress, the elements 12 to be transferred are selectively pressed, sothat the anisotropic conductive adhesive 31 can be selectively pressedonly at the places positioned immediately beneath the elements 12 to betransferred. Here, the heating for curing differs depending on theanisotropic conductive adhesive 31 used, and is performed at around 50°C. to 200° C. The thickness of the film-like anisotropic conductiveadhesive 31 is not specifically limited, but is preferably around 1 μmto 100 μm.

[0134] In this manner, after selectively pressing the anisotropicconductive adhesive 31, and then curing by heating, the pressed area ofthe anisotropic conductive adhesive 31 becomes a conductive part 31 ahaving conductivity in the pressing direction. Consequently, theterminal sections 20 a, 22 a and 22 a of the element 12 respectivelyconduct with the corresponding electrode pads 15 a (15 b, 15 c).Moreover, regarding the anisotropic conductive adhesive 31, since theinsulativity is still retained in the non pressing direction, thenbetween the terminal sections 20 a, 22 a and 22 a of the element 12 andbetween the corresponding electrode pads 15 a (15 b, 15 c), the mutualinsulation remains, so that they are respectively electricallyindependent.

[0135] [Third Process]

[0136] In this manner, after adhering the elements 12 to be transferredon the original substrate 10, to the final substrate 14 via theanisotropic conductive adhesive 31, exfoliation is produced in theseparation layer 11 between the original substrate 10 and the elements12 to be transferred.

[0137] In order to produce exfoliation in the separation layer 11, asshown in FIG. 6, a light L is selectively irradiated using a metal mask(not shown) or the like, from the original substrate 10 side to theseparation layer 11 of the elements 12 to be transferred, so as toproduce exfoliation in the separation layer 11 and/or at the interface.By producing exfoliation in this manner, the separation layer 11 isexfoliated and the elements 12 to be transferred are separated from theseparation layer 11, giving the condition where these are adhered viathe anisotropic conductive adhesive 31 to the final substrate 14 side.

[0138] The theory of the occurrence of internal exfoliation and/orinterfacial exfoliation in the separation layer 11 presumes theoccurrence of ablation in the constituents of the separation layer 11,the release of gas contained in the separation layer 11, or a phasetransition such as melting or transpiration generated immediately afterthe irradiation.

[0139] The word “ablation” means that solid components (the constituentsof the separation layer 11), which absorbed the incident light, arephotochemically and thermally excited and atoms or molecules on thesurface or inside the solid components are released by the chainscission. The ablation is mainly observed as phase transition such asmelting or vaporization in the partial or entire constituents of theseparation layer 11. Also, fine foaming may be formed by the phasetransition, resulting in a decreased adhering force.

[0140] The internal and/or interfacial exfoliation of the separationlayer 11 depends on the composition of the separation layer 11 and otherfactors, for example, the type, wavelength, intensity, and range of theincident light.

[0141] Any type of incident light which causes internal and/orinterfacial exfoliation of the separation layer 11 can be used, forexample, X-rays, ultraviolet rays, visible rays, infrared rays (heatrays), laser beams, milli-waves, micro-waves, electron rays, andradiations (α-rays, β-beta rays, and γ-rays).

[0142] Among them, laser beams are preferable because they can easilycause exfoliation (ablation) of the separation layer 11, and are capableof highly accurate local irradiation. Laser light is coherent light andpreferable for producing exfoliation at the desired part by irradiatingthe high powered pulse light the via the original substrate 10 onto theseparation layer . Hence, by using laser light, it becomes possible toeasily and reliably exfoliate the elements 12.

[0143] Examples of lasers generating the laser beams include various gaslasers and solid lasers (semiconductor lasers), and excimer lasers,Nd-YAG lasers, Ar lasers, CO₂ lasers, CO lasers, and He—Ne lasers may bepreferably used.

[0144] The laser light preferably has a wavelength of 100 nm to 350 nm.In this manner, by using the short wavelength laser light, lightirradiation accuracy becomes higher and the exfoliation in theseparation layer 11 can be effectively performed.

[0145] Examples of laser light that satisfy the above conditions includeexcimer lasers. The excimer laser is a gas laser which is capable ofoutputting laser light with high energy in the short wavelength UVrange. Four typical types of laser light can be output (XeF=351 nm,XeCl=308 nm, KrF=248 nm, ArF=193 nm) by combinations of rare gasses (Ar,Kr, Xe, and etc.) and halogen gasses (F₂, HCl, and etc.) as the lasermedia. Since the excimer laser outputs high energy in the shortwavelength range, it can cause ablation of the separation layer 11 in anextremely short time. Hence it can exfoliate the separation layer 11without deteriorating or damaging to the adjacent element 12.

[0146] Alternatively, in the case of imparting exfoliationcharacteristic to the separation layer 11 by causing phase changes suchas gas evolution, vaporization and sublimation, the wavelength of theirradiating laser light is preferably around 350 nm to 1200 nm.

[0147] Laser light of such wavelengths may use a laser light source orirradiating device widely used in general processing fields, such as aYAG or gas laser, so that light irradiation can be performed easily atlow cost. By using such laser light of wavelength in the visible lightrange, the original substrate 10 need only be visible lighttransmitting, thus widening the degree of freedom for selecting theoriginal substrate 10.

[0148] Preferably, the energy density of the incident laser light, andparticularly of the excimer lasers, ranges from approximately 10 to5,000 mJ/cm², and more preferably approximately 100 to 500 mJ/cm ². Theirradiation time preferably ranges from 1 to 1,000 nsec., and morepreferably from 10 to 100 nsec. At an energy density or irradiation timewhich is lower than the lower limit, satisfactory ablation will notoccur, whereas at an energy density or irradiation time which is higherthan the upper limit, the element 12 is adversely affected by theincident light passing through the separation layer 11.

[0149] As a solution to the case where the irradiating light which haspassed through the separation layer 11 reaches and adversely affects theelement 12, for example, there is a method where a metal film 11 such astantalum (Ta) is formed on the separation layer 11. Accordingly, thelaser light which has passed through the separation layer 11 is fullyreflected at the interface of the metal film, and thus does notadversely affect the elements 12 thereabove.

[0150] It is preferable that the incident light including laser beams beincident on the separation layer with a uniform intensity. The incidentlight may be incident on the separation layer 11 from the directionperpendicular to the separation layer 11 or from a direction shifted bya given angle from the perpendicular direction.

[0151] The same position may be irradiated two or more times. Moreover,the same position or different positions may be irradiated withdifferent types and/or wavelengths of incident (laser) light beams twoor more times.

[0152] [Fourth process]

[0153] Next, as shown in FIG. 7, by applying a force on the originalsubstrate 10 and the final substrate 14 in a direction to separate both,the original substrate 10 is removed from the final substrate 14. Here,since by the third process, the separation layer 11 of the elements 12to be transferred to the final substrate 14 has been exfoliated from theelements 12, the elements 12 to be transferred are separated from theoriginal substrate 10. Moreover, the elements 12 to be transferred areadhered by the anisotropic conductive adhesive 31 to the desiredposition of the final substrate 14, namely the electrode pads 15 in thepresent embodiment.

[0154] In the third process, it is desirable to produce completeexfoliation in the separation layer 11. However, if the adhesivestrength of the anisotropic conductive adhesive 31 for adhering theelements 12 to be transferred is superior to the adhesive strength dueto the remaining separation layer 11, so that as a result when theoriginal substrate 10 and the final substrate 14 are separated, theelements 12 to be transferred are reliably transferred to the finalsubstrate 14 side, then exfoliation need only be produced in a part ofthe separation layer 11.

[0155] By separating the original substrate 10 from the final substrate14, as shown in FIG. 7, the elements 12 are transferred to the pluralpositions on the final substrate 14.

[0156] Here, regarding the film-like anisotropic conductive adhesive 31,at the places corresponding to the elements 12 which are nottransferred, adhesion by pressing has not eventuated, and hencesufficient adhesion between the elements 12 which are not transferredhas not eventuated. Therefore, since the separation layer 11 of theelements 12 which are not transferred is not exfoliated, the adhesivestrength between the elements 12 and the anisotropic conductive adhesive31 is opposed so that they easily peel off. As a result, the originalsubstrate 10 is easily separated from the final substrate 14.

[0157] The original substrate 10 on which untransferred elements 12remain, can be used for successively transferring many elements 12 ontoareas of the same final substrate 14 where the elements 12 have not beentransferred, or onto another final substrate 14, by repeating the secondand third processes. That is to say, in the case where the manufacturingmethod for a device of the present invention is applied, for example, toa manufacturing method for an active matrix substrate for anelectro-optic device, microscopic elements 12 such as TFTs can bedispersingly arranged effectively for each of the many pixels on thesubstrate.

[0158] There may be a case where the exfoliation residue of theseparation layer 11 is adhered on the element 12 transferred to thefinal substrate 14, and it is desirable to completely remove this. Amethod for removing the residual separation layer 11 may involvesuitably selecting and using such methods as, for example, washing,etching, ashing, grinding, or a combination of these.

[0159] Through the abovementioned respective processes it is possible toselectively transfer the many elements 12 to be transferred onto thefinal substrate 14, in the condition as shown in FIG. 8, where theterminal sections 20 a, 22 a, and 22 a are respectively adhered to theelectrode pads 15 a, 15 b and 15 c. FIG. 8 is a schematic diagram of anactive matrix substrate which is a component of an active matrix typeliquid crystal electro-optic device. Reference symbol 9 in FIG. 8denotes pixel electrodes.

[0160] Then, the transferred elements 12 are connected for example, viathe electrode pad 15 and the previously formed wiring 30, to componentson the final substrate 14 by other wiring; and are covered by a desiredprotective film, and furthermore, a device is formed by combining thefinally obtained device with other components.

[0161] According to such a device manufacturing method, the manyelements 12 which are to be dispersingly arranged at intervals on thefinal substrate 14 can be concentratedly manufactured on the originalsubstrate 10. Hence, compared to the case where the elements 12 aredirectly formed on the final substrate 14, the area efficiency in themanufacture of the elements 12 can be greatly increased, and a finalsubstrate 14 with the many elements 12 dispersingly arranged can beeffectively manufactured at low cost.

[0162] Moreover, it becomes easily feasible to select and remove beforetransfer, the many elements 12 which are concentratedly manufactured onthe original substrate 10. As a result product yield rate can beincreased.

[0163] Furthermore, since the surface 12 a where the terminal sections20 a, 22 a and 22 a of the transferred elements 12 are exposed isadhered via the film-like anisotropic conductive adhesive 31 to thefinal substrate 14, the anisotropic conductive adhesive 31 is directlyadhered to the electrode pads 15 on the final substrate 14. Hence,adhesion of the elements 12 to the final substrate 14 and conduction ofthe terminal sections 20 a, 22 a and 22 a with the electrode pads 15 a,15 b and 15 c can be performed at the same time. Consequently, theprocess after transferring, for conducting the terminal sections withthe electrode pad 15 by wiring is obviated, enabling simplification ofthe processes.

[0164] Moreover, since the original substrate 10 is substrate forforming the elements, then when forming the elements 12 on the originalsubstrate 10, the terminal sections 20 a, 22 a and 22 a should beprovided on the side opposite to the original substrate 10, that is, theouter side. Hence, it is easy to form the terminal sections 20 a, 22 aand 22 a.

[0165] Furthermore, since, the conductive adhesive is an anisotropicconductive adhesive 31, the electrode pads 15 a (15 b, 15 c) are eachmade independently conducting with the many terminal sections 20 a, 22 aand 22 a of the elements 12. The terminal sections and the correspondingelectrode pads are arranged to oppose each other, and adhered by theanisotropic conductive adhesive 31 and pressed. As a result, that theanisotropic conductive adhesive 31 demonstrates its anisotropy andconducts only between the opposing terminal sections, and electrodepads. Consequently, productivity can be made extremely good.

[0166] Moreover, since the film-like adhesive is used as the anisotropicconductive adhesive 31 being a conductive adhesive, handling isfacilitated. Hence productivity can be increased.

[0167] Furthermore, it is possible to laminate and unite the same ordifferent elements 12. Therefore, by uniting the elements manufacturedunder different process conditions, an element having a laminatedstructure which is conventionally difficult to manufacture can beprovided, and an element having a three-dimensional structure can beeasily manufactured.

[0168] Moreover, in the device obtained in this manner, since thesurface 12 a where the terminal sections 20 a, 22 a and 22 a of theelements 12 are exposed is adhered via the anisotropic conductiveadhesive 31 to the electrode pads 15 on the substrate (final substrate14), then during the manufacture, a process for mounting the elements 12on the substrate (final substrate 14) and a process for conducting theterminal sections 20, 22 a and 22 a of elements 12 with the electrodepads 15 of the substrate (final substrate 14) are performed at the sametime. Consequently, the process after the mounting, for conducting theterminal sections 20, 22 a and 22 a with the electrode pads 15 by wiringbecomes unnecessary, giving high productivity.

[0169] In the device obtained by such manufacturing methods, since theelements 12 constituting this are accurately positioned on the finalsubstrate 14, then different from the macrostructure used in theconventional microstructure arrangement techniques, the extrasymmetrical circuit structure becomes unnecessary. Hence, extremelysmall microscopic blocks on which are formed only the circuits to meetminimum requirements are possible. Therefore, a very large number ofelements 12 can be concentratedly manufactured on the original substrate10 and the cost per element is greatly reduced, so that the deviceitself is also reduced in cost.

[0170] In the example, the film-like anisotropic conductive adhesive 31serving as the conductive adhesive has its whole surface affixed to thefinal substrate. However, as shown in FIG. 9, this may be affixed onlyon the element transferring area of the final substrate 14, that is, onthe electrode pads 15. In this case, the wiring 30 for connecting to theelectrode pads 15 a, 15 b and 15 c, may be performed after transferringthe elements rather than being pre-formed. However, in this case, thewhole surface of the electrode pads 15 a, 15 b and 15 c is not coveredby the anisotropic conductive adhesive 31.

[0171] Furthermore, the film-like anisotropic conductive adhesive 31 maybe affixed to the terminal section forming surface of the elements 12,rather than to the electrode pads 15.

[0172] If so the adhesion of the original substrate 10 to the finalsubstrate 14 by pressing can be performed by appropriately pressing overthe whole surface, rather than being selectively performed.

[0173] (Second Embodiment)

[0174] The difference of the second embodiment to the first embodimentis the point that anisotropic conductive adhesive in paste form, thatis, in liquid form, is used as the conductive adhesive, instead of thefilm-like anisotropic conductive adhesive.

[0175] In this embodiment, the final substrate 14 shown in FIG. 3Bformed with the wiring 30 for connecting to the electrode pads 15 a, 15b, 15 c is prepared, and liquid form anisotropic conductive adhesive 32as shown in FIG. 10 is applied on this over the whole surface by spincoating.

[0176] The liquid form (paste form) anisotropic conductive adhesive 32is not specifically limited, and various kinds can be used. Examplessuitable for use include “3370G” made by Three Bond Co., Ltd. Thisanisotropic conductive adhesive 32, as with the film-like anisotropicconductive adhesive 32, is also formed by dispersing fine conductiveparticles in an insulative paste, and it is constituted so as to becured by heat pressing.

[0177] After whole surface application of this liquid form anisotropicconductive adhesive 32 onto the final substrate 14 by spin coating, theoriginal substrate 10 is adhered via the anisotropic conductive adhesive32 onto the final substrate 14. Then, similarly to the first embodiment,only the places immediately below the elements 12 are selectivelypressed and heated, so that the anisotropic conductive adhesive 31 iscured. Here, the heating for curing also differs depending on theanisotropic conductive adhesive 32 used, but is performed at around 50°C. to 200° C. The thickness of the liquid form anisotropic conductiveadhesive 32, it is not specifically limited, but is preferably around 1μm to 100 μm.

[0178] Hereunder, similarly to the first embodiment, exfoliation andseparation of substrates is performed, to form the device.

[0179] Also with such a device manufacturing method, and the deviceobtained by this, similar effects to the case of the first embodimentcan be obtained.

[0180] Specifically, since the liquid form anisotropic conductiveadhesive 32 is used as the anisotropic conductive adhesive, the wholesurface application can be easily performed by spin coating. Henceproductivity can be increased.

[0181] (Third Embodiment)

[0182] The difference of the third embodiment to the second embodimentis the point that the liquid form anisotropic conductive adhesive 32 isselectively arranged by a liquid droplet discharge method such as aninkjet method, a dispenser method, or the like, instead of whole surfaceapplication by spin coating.

[0183] In this embodiment, the final substrate 14 shown in FIG. 3Bformed with the wiring 30 for connecting to the electrode pads 15 a, 15b and 15 c may be used. However, as shown in FIG. 11, the finalsubstrate 14 formed with only the electrode pads 15 a, 15 b and 15 cbefore forming the wiring 30 may also be used.

[0184] In the case where the final substrate formed with the only theelectrode pads 15 a, 15 b and 15 c is used, the anisotropic conductiveadhesive 32 being in liquid form is discharged from a droplet dischargesection, for example, an inkjet head H, so as not to cover the wholesurface of these electrode pads 15 a, 15 b and 15 c. Discharge of theanisotropic conductive adhesive 32 may be performed not for the finalsubstrate 14 but for the terminal section forming surface 12 a.

[0185] To describe an example of the construction of the inkjet head H,the inkjet head H, as shown in FIG. 12A, comprises for example a nozzleplate 40 made from stainless steel and a diaphragm 41, with bothconnected via a partition member (reservoir plate) 42. Between thenozzle plate 40 and the diaphragm 41 are formed by means of thepartition member 42, a plurality of cavities 43 and liquid reservoirs44. The respective cavities 43 and the interior of the liquid reservoirs44 are filled with discharge liquid, and the cavities 43 and the liquidreservoirs 44 are communicated via a supply port 45. In the nozzle plate40 are formed nozzles 46 for discharging the discharge liquid from thecavities 43. On the other hand, in the diaphragm 41 is formed a hole 47for supplying the discharge liquid to the liquid reservoirs 44.

[0186] As shown in FIG. 12B, piezoelectric elements (piezo device) 48are attached to the surface of the diaphragm 41 on the opposite side tothe surface facing the cavities 43. The piezoelectric elements 48 arepositioned between a pair of electrodes 49, and configured so as to flexand protrude outwards when energized. Based on such a configuration, thediaphragm 41 to which the piezoelectric element 48 is attached, isintegrated with the piezoelectric element 48 and thus flexes outwards atthe same time. As a result, the volume of the cavity 43 increases.Consequently, discharge liquid equivalent to the increased volume flowsin to the interior of the cavity 43 from the liquid reservoir 44 via thesupply port 45. Furthermore, when from such a condition, energizing ofthe piezoelectric element 48 is terminated, both the piezoelectricelement 48 and the diaphragm 41 return to their initial shapes.Therefore, the cavity 43 returns to the initial volume, and hence thepressure of discharge liquid inside of cavity 43 increases, and adroplet L of the anisotropic conductive adhesive 32 being the dischargeliquid is discharged from the nozzle 46 towards the final substrate 14.

[0187] The inkjet method for the inkjet head H, is not limited to thepiezo jet type using the piezoelectric element 48, and various methodscan be adopted.

[0188] In this manner, once the anisotropic conductive adhesive 32 hasbeen selectively applied onto electrode pads 15 on the final substrate14, or onto the terminal section forming surface 12 a of the elements12, the original substrate 10 is adhered via this anisotropic conductiveadhesive 32, onto the final substrate 14. Then, similarly to the secondembodiment, pressing and heating is performed so that the anisotropicconductive adhesive 31 is cured. Furthermore, wiring (not shown) forconnecting to the electrode pads 15 a, 15 b and 15 c is formed. However,in this case, since the anisotropic conductive adhesive 32 isselectively applied previously, the adhesion of the original substrate10 to the final substrate 14 by pressing is not selectively performed,and can be performed by suitably pressing over the whole surface.

[0189] Hereunder, similarly to the first embodiment, exfoliation andseparation of the substrates is performed to form the device.

[0190] Also with such a device manufacturing method, and the deviceobtained by this, similar effects to the case of the first embodimentcan be obtained.

[0191] Furthermore, since the liquid form anisotropic conductiveadhesive 32 can be selectively arranged as the conductive adhesive ononly the desired positions, then by selectively arranging theanisotropic conductive adhesive 32 onto the electrode pads 15 on thefinal substrate 14, loss of adhesive can be reduced. Moreover, transferof the elements to the final substrate can be done easily.

[0192] (Fourth Embodiment)

[0193] The difference of the fourth embodiment to the third embodimentis the point that instead of selectively arranging the liquid formanisotropic conductive adhesive 32 by the liquid droplet dischargemethod, this is selectively applied by screen printing. The processafter application is the same as for the third embodiment.

[0194] In this way, as well as obtaining similar effects to the case ofthe first embodiment, the effect of reducing the loss of the adhesivecan be also obtained.

[0195] (Fifth Embodiment)

[0196] The difference of the fifth embodiment to the third embodiment isthe point that instead of selectively arranging the liquid formanisotropic conductive adhesive 32 by the liquid droplet dischargemethod, this is selectively applied a stamper.

[0197] That is to say, in the fifth embodiment, as shown in FIG. 13A, astamper 33 having convex application sections 33 a at positions forapplying the anisotropic conductive adhesive 32 is prepared. Thisstamper 33 is inserted into a container 34 storing the anisotropicconductive adhesive 32, and as shown in FIG. 13B, the anisotropicconductive adhesive 32 adheres to the application sections 33 a. Next,as shown in FIG. 13C, the stamper 33 is aligned on the final substrate14 or on the original substrate 10, and in this condition, theapplication sections 33 are pressed for a predetermined time onto theelectrode pads 15 of the final substrate 14 or onto the elements 12 ofthe original substrate 10, and then separated. Therefore, theanisotropic conductive adhesive 32 which is adhered onto the applicationsections 33 a shifts onto the electrode pads 15 or the elements 12. As aresult, the anisotropic conductive adhesive 32 is selectively applied.

[0198] The processes after application are the same as for the thirdembodiment.

[0199] In this way, as well as obtaining a similar effect to the case ofthe first embodiment, the effect of being able to reduce the loss of theadhesive is also obtained. Moreover, this gives a superior method formass production.

[0200] (Sixth Embodiment)

[0201] The difference of the sixth embodiment to the third embodiment isthe point that, prior to selectively arranging of the liquid formanisotropic conductive adhesive 32 by the liquid droplet dischargemethod, partitions are formed for enclosing the positions where theanisotropic conductive adhesive 32 is arranged. Then the anisotropicconductive adhesive 32 is selectively arranged within these partitions.

[0202] That is to say, in the sixth embodiment, as shown in FIG. 14, onthe electrode pads 15 of the final substrate 14, partitions 34 areformed at peripheral portions enclosing the central upper surface of theelectrode pads 15. Then, the anisotropic conductive adhesive 32 isselectively arranged inside the partitions 34, by a liquid dropletdischarge method such as the inkjet method or a dispenser method (FIG.14 shows the case performed by the inkjet method). The partitions 34 areformed by applying resin such as resist and then patterning by aphotolithography technique. Further, after applying the anisotropicconductive adhesive 32, the partitions 34 are removed by etching.

[0203] The processes after applying the anisotropic conductive adhesive32 in this manner and then removing the partitions 34, are the same asfor the third embodiment.

[0204] In this way, as well as obtaining a similar effect to the case ofthe first embodiment, by discharging the anisotropic conductive adhesive32 into the partitions 34 to arrange this, the anisotropic conductiveadhesive 32 can be more reliably applied to the desired positions.

[0205] (Seventh Embodiment)

[0206] The difference of the seventh embodiment to the third embodimentis the point that prior to selectively applying the anisotropicconductive adhesive 32 onto the final substrate 14, concavities areformed in the final substrate 14 at junction positions with the elements12, and then anisotropic conductive adhesive 32 is selectively arrangedinside the concavities.

[0207] That is to say, as shown in FIG. 15, using a photolithographytechnique or an etching technique on the final substrate 14, concavities35 are formed, and the electrode pads 15 are formed inside theconcavities 35 and at the peripheries. After this, the anisotropicconductive adhesive 32 is selectively applied into the concavities 35.

[0208] The processes after application are the same as for the thirdembodiment.

[0209] In this way, as well as obtaining a similar effect to the case ofthe first embodiment, by discharging the anisotropic conductive adhesive32 into the concavities 35 to arrange this, the anisotropic conductiveadhesive 32 can be more reliably applied to the desired position.

[0210] Furthermore, for example, if the concavities 35 are formed intoshapes to fit the elements 12, then the alignment when adhering thesubstrate 10 for transferring and the final substrate 14 can beperformed by fitting the elements 12 to the concavities 35. Therefore,alignment when adhering the substrate pairs can be performed easily andaccurately.

[0211] Furthermore, by fitting the elements 12 into the concavity 35,the film thickness of the substrate mounting the elements 12 (the finalsubstrate 14) can be made thinner.

[0212] (Eighth Embodiment)

[0213] The difference of the eighth embodiment to the third embodimentis the point that prior to selectively applying the anisotropicconductive adhesive 32 onto the final substrate 14, the position wherethe anisotropic conductive adhesive 32 is arranged on the elements 12 oron the final substrate 14 is subjected to a lyophilic treatment, and/orthe periphery of the position where the anisotropic conductive adhesive32 is arranged is subjected to a liquid repellent treatment.

[0214] Here the liquid repellent treatment can be performed for exampleby forming a SAM (Self Assembled Mono layer) film using a fluororesinsuch as hexafluoropolypropylene. On the other hand, as the lyophilictreatment, lyophilication of the irradiated parts can be performed byselectively performing ultraviolet irradiation using a mask, on theliquid repellent treated area. Furthermore, apart from the liquidrepellent treatment, by performing plasma processing with oxygen as theprocess gas, on the desired area, it is possible to treat the surface tomake the desired part lyophilic.

[0215] Then, for example, on the electrode pads 15, the parts except forthe area for connecting the wiring 30 are made lyophilic, or the areafor connecting the wiring 30 is made liquid repellent, and in thiscondition, the anisotropic conductive adhesive 32 is discharged andarranged on the lyophilic treated part by the liquid droplet dischargemethod.

[0216] In this way, even if the anisotropic conductive adhesive 32 isdischarged shifted from the desired position, due to the liquidrepellent treatment at the shifted position, the anisotropic conductiveadhesive 32 is repelled to the desired position, and as a result, isapplied to the desired position. Furthermore, the anisotropic conductiveadhesive 32 discharged to the desired position, due to the lyophilictreatment, stays in the position and does not flow to the surroundings.

[0217] Hence, according to the eighth embodiment, as well as obtaining asimilar effect to the case of the first embodiment, the anisotropicconductive adhesive 32 can be more reliably applied to the desiredposition.

[0218] In the above embodiments, anisotropic conductive adhesive is usedas the conductive adhesive, however, the present invention is notlimited to this, and general conductive adhesive may be used rather thansuch anisotropic conductive adhesive, that is to say, conductiveadhesive film, or conductive adhesive paste. Here, examples ofconductive adhesive film suitable for use include “3316” made by ThreeBond Co., Ltd. Furthermore, examples of conductive adhesive pasteinclude “3301” made by Three Bond Co., Ltd., “Unimec conductive paste”made by NAMICS Corporation, and “Ombond” made by OMRON Corporation.

[0219] Such conductive adhesive film or conductive adhesive paste, inthe case where there is one terminal section for the element 12 to betransferred, can be used similarly to the abovementioned film-likeanisotropic conductive adhesive 31 in the first embodiment, or the pasteform anisotropic conductive adhesive 32 in the second embodiment.

[0220] In the case where there are plural terminal sections for theelement 12, it is necessary to form the conductive adhesive for adheringto these terminal sections in the condition of independence for each ofthe respective terminal sections, and to insulate between theindependent conductive adhesives. The reason for this is so thatshort-circuits between the terminal sections by the conductive adhesivecan be prevented.

[0221] Hereunder embodiments are illustrated for the case where thereare plural terminal sections for the elements 12.

[0222] (Ninth Embodiment)

[0223] The difference of the ninth embodiment to the third embodiment isthe point that, as described above, the conductive adhesive is notanisotropic conductive adhesive but general conductive adhesive, and thepoint that the conductive adhesive is made in a condition ofindependence by positioning apart for each of the respective terminalsections, to thereby insulate between the conductive adhesives.

[0224] That is to say, as shown in FIG. 16, for the electrode pads 15 a,15 b and 15 c formed on the final substrate 14, there is providedindependently for each, film-like, or paste-like (liquid form)conductive adhesive 36. Next, the original substrate (not shown) isadhered, and the respective terminal sections 20 a, 22 a and 22 a of theelements 12 are adhered via the conductive adhesive 36 to thecorresponding electrode pads 15 a (15 b, 15 c). Then, as necessary, theconductive adhesive 36 is cured by heat treatment or the like.

[0225] The processes after providing the conductive adhesive 36 in thismanner and then curing as necessary, are the same as for the firstembodiment or the third embodiment.

[0226] In this way, since the surface where the terminal sections 20 a,22 a and 22 a of the elements 12 are exposed are adhered via theconductive adhesive 36 to the electrode pads 15 a (15 b, 15 c) on thefinal substrate 14, then during manufacture, the process for mountingthe elements 12 on the final substrate 14, and the process forconducting the terminal sections 20 a, 22 a, 22 a of the elements 12with the electrode pads 15 of the final substrate 14 can be performed atthe same time. Hence, the process for conducting the terminal sections20 a, 22 a and 22 a with the electrode pads 15 by wiring after mountingcan be eliminated, and the processes thus simplified.

[0227] Furthermore, despite of using general conductive adhesive 36which is not anisotropic, short-circuits between the terminal sections20 a, 22 a and 22 a by the conductive adhesive 36 can be reliablyprevented.

[0228] When arranging the conductive adhesive 36 separated for each ofthe respective terminal sections, it is preferable to do this usingpaste form adhesive which can be changed to liquid form, as theconductive adhesive 36, and selectively apply this by the liquid dropletdischarge method. In this case, it is preferable to more reliablyperform the selective application of the conductive adhesive 36 byperforming the lyophilic treatment and the liquid repellent treatmentillustrated in the eighth embodiment.

[0229] (Tenth Embodiment)

[0230] The difference of the tenth embodiment to the ninth embodiment isthe point that, as a method for making the conductive adhesive 36 in anindependent insulated condition for each of the respective terminalsections, the conductive adhesive 36 is separated by insulativepartitions.

[0231] That is to say, in the tenth embodiment, as shown in FIG. 17, foreach of the electrode pads 15 a, 15 b and 15 c corresponding to therespective terminal sections 20 a, 22 a and 22 a, an insulativepartition 37 is formed similarly to with the sixth embodiment, and thepartition 37 formed by this, functions to separate between the electrodepads 15 a and 15 b, and also between the electrode pads 15 b and 15 c.When forming the partitions 37, in the case where the wiring 30 isconnected to the electrode pads 15 a, 15 b and 15 c by a subsequentprocess, the arrangement is such that the connection parts remain out ofthe partition 37.

[0232] Then, after forming the partitions 37 in this way, paste formadhesive which is adjustable to liquid form is used as the conductiveadhesive 36, and this is selectively discharged and arranged inside thepartitions 37 by the liquid droplet discharge method. Next, the originalsubstrate (not shown) is adhered, and the respective terminal sections20 a, 22 a and 22 a of the elements 12 are adhered via the conductiveadhesive 36 to the corresponding electrode pads 15 a (15 b, 15 c). Thenthe conductive adhesive 36 is cured by heat treatment or the like.

[0233] After curing the conductive adhesive 36 in this way, the wiring30 is connected to the electrode pads 15 a, 15 b and 15 c as necessary,and thereafter the subsequent processes are performed similarly to withthe third embodiment.

[0234] In this way, similarly to with the ninth embodiment, the processfor conducting the terminal sections 20 a, 22 a and 22 a with theelectrode pads 15 by wiring after mounting of the elements 12 can beeliminated, and the processes thus simplified.

[0235] Furthermore, since between the terminal sections 20 a and 22 a(between the electrode pads) is insulated by the partitions 37 whichgive separation, short-circuits between the terminal sections 20 a, 22 aand 22 a by the conductive adhesive 36 can be reliably prevented.

[0236] In the tenth embodiment, after curing the conductive adhesive 36,the arrangement of the ninth embodiment can be obtained by selectivelyremoving (etching) only the partition 37.

[0237] (Eleventh Embodiment)

[0238] The difference of the eleventh embodiment to the ninth embodimentis the point that as a method for making the conductive adhesive 36 inan independent insulated condition for each of the respective terminalsections, the conductive adhesive 36 is arranged inside respectiveindependent concavities.

[0239] That is to say, in the eleventh embodiment, as shown in FIG. 18,respective independent concavities 38 are formed in the surface layerportion of the final substrate 14, and the electrode pads 15 a, 15 b and15 c corresponding to the respective terminal sections 20 a, 22 a and 22a are respectively provided in these concavities 38. These electrodepads 15 a, 15 b and 15 c are connected to wiring 30 (not shown) asnecessary.

[0240] Then after respectively providing the electrode pads 15 a (15 b,15 c) in the concavities 38 in this way, paste form adhesive which isadjustable to liquid form is used as the conductive adhesive 36, andthis is selectively discharged and arranged inside the partitions 37 bythe liquid droplet discharge method. In this case, it is desirable tomore reliably perform selective application of the conductive adhesive36, by performing lyophilic treatment inside the concavities 38 andliquid repellent treatment of the surroundings of the concavities 38 asillustrated in the eighth embodiment.

[0241] Next, the original substrate (not shown) is adhered, and therespective terminal sections 20 a, 22 a and 22 a of the elements 12 areadhered via the conductive adhesive 36 to the corresponding electrodepads 15 a (15 b, 15 c). Then the conductive adhesive 36 is cured by heattreatment or the like.

[0242] After curing the conductive adhesive 36 in this way, thereafterthe subsequent processes are performed similarly to with the thirdembodiment In this way, similarly to with the ninth embodiment, theprocess for conducting the terminal sections 20 a, 22 a and 22 a withthe electrode pads 15 by wiring after mounting of the elements 12 can beeliminated, and the processes thus simplified.

[0243] Furthermore, since between the terminal sections 20 a and 22 a(between the electrode pads) it insulated by respectively independentlyforming the concavities 38, short-circuits between the terminal sections20 a, 22 a and 22 a by the conductive adhesive 36 can be reliablyprevented.

[0244] In the abovementioned embodiments, the arrangement is such thatthe original substrate 10 is the substrate for element forming, howeverthe present invention is not limited to this. For example, the substratefor element forming and the original substrate in the present inventionmay be separate, and the elements transferred temporarily from thesubstrate for element forming to the original substrate, after which theelements are again transferred to the final substrate. Furthermore, thetransferring from the substrate for element forming to another originalsubstrate may be performed once or several times, after which theelements are transferred to the final substrate via the originalsubstrate of the present invention.

[0245] Here, devices obtained by such a manufacturing method, are notspecifically limited, and the method is applicable to any device as longas a constituent is an element such as a semiconductor element or anoptical element. The method can be applied to various devices, forexample, various kinds of semiconductor devices having switchingelements such as memories or TFTs, electro-optic devices such as organicelectroluminescence devices, liquid crystal displays, electrophoresisapparatus, plasma display units, and also optical devices such as laserequipment.

[0246] Examples of electronic equipment of the present invention arethose having the abovementioned electro-optic device as a display panel,specifically as shown in FIG. 19.

[0247]FIG. 19A is a perspective view showing an example of a mobilephone. In FIG. 19A, reference numeral 600 denotes the main body of themobile phone, and 601 denotes a display panel having the abovementionedelectro-optic device.

[0248]FIG. 19B is a perspective view showing an example of a portableinformation processor such as word processor or personal computer. InFIG. 19B, reference numeral 700 denotes an information processor, 701denotes an input section such as keyboard, 703 denotes a main body ofthe information processor, and 702 denotes a display panel having theabove mentioned electro-optic device.

[0249]FIG. 19C is a perspective view showing an example of a watch typeelectronic equipment. In FIG. 19C, reference numeral 800 denotes a mainbody of the watch and 801 denotes a display panel having theabovementioned electro-optic device.

[0250] The electronic equipment shown in FIG. 19A to 19C are furnishedwith display panels having the abovementioned electro-optic devices,thus giving a high productivity low cost product.

[0251] While preferred embodiments of the invention have been describedand illustrated above, it should be understood that these are exemplaryof the invention and are not to be considered as limiting. Additions,omissions, substitutions, and other modifications can be made withoutdeparting from the spirit or scope of the present invention.Accordingly, the invention is not to be considered as being limited bythe foregoing description, and is only limited by the scope of theappended claims.

1. A manufacturing method for a device in which some or all of pluralelements formed on an original substrate are transferred to a finalsubstrate, and some or all of the transferred elements are used tomanufacture the device, comprising: a first process for providing theplural elements on said original substrate via a separation layer in acondition where terminal sections are exposed to a surface on anopposite side to the separation layer; a second process for adhering thesurface where the terminal sections of said elements to be transferredon the original substrate are exposed, via conductive adhesive, to asurface of the final substrate on a side where conductive sections forconducting with the terminal sections of said elements are provided; athird process for producing exfoliation in said separation layer betweensaid original substrate and said final substrate; and a fourth processfor separating said original substrate from which the transfer ofelements has been completed, from said final substrate.
 2. Amanufacturing method for a device according to claim 1, wherein saidoriginal substrate is a substrate for forming elements.
 3. Amanufacturing method for a device according to claim 1, wherein saidconductive adhesive is an anisotropic conductive adhesive.
 4. Amanufacturing method for a device according to claim 3, wherein in saidsecond process, a film-like anisotropic conductive adhesive is used assaid conductive adhesive, and said film-like adhesive is adhered to thesurface on the side where the terminal sections of said element areexposed, or to the position to be connected to said terminal sections onthe surface of said final substrate on the side where the conductivesections are provided.
 5. A manufacturing method for a device accordingto claim 1, wherein in said second process, said conductive adhesive isprovided between the elements and the final substrate in liquid form,and then cured.
 6. A manufacturing method for a device according toclaim 5, wherein in said second process, said conductive adhesive isselectively arranged by a liquid droplet discharge method.
 7. Amanufacturing method for a device according to claim 6, wherein prior toselectively arranging said conductive adhesive by the liquid dropletdischarge method, the position where the conductive adhesive for theelements or for the final substrate is arranged is subjected to alyophilic treatment, and/or the surroundings of the position where theconductive adhesive is arranged is subjected to a liquid repellenttreatment.
 8. A manufacturing method for a device according to claim 6,wherein prior to selectively arranging said conductive adhesive by theliquid droplet discharge method, a partition is formed to enclose theposition where the conductive adhesive for the elements or for the finalsubstrate is arranged, and then, the conductive adhesive is selectivelyarranged within said partition.
 9. A manufacturing method for a deviceaccording to claim 6, wherein prior to selectively arranging saidconductive adhesive by the liquid droplet discharge method, a concavityis formed at a junction position of the elements with the finalsubstrate, and then the conductive adhesive is selectively arranged insaid concavity.
 10. A manufacturing method for a device according toclaim 9, wherein conductive sections for conducting with the terminalsections of said elements are provided beforehand in said concavity. 11.A manufacturing method for a device according to claim 1, wherein in acase where there are plural terminal sections of said elements, theconductive adhesive to be formed on the terminal sections is formed in acondition of independence for each of the respective terminal sections,and between the independent conductive adhesives is insulated.
 12. Adevice comprising elements provided on a substrate, wherein terminalsections are provided in an exposed condition on a surface of saidelements on the substrate side, and conductive sections for conductingwith the terminal sections of said elements are provided on the surfaceof said substrate on the side where the elements are provided; and saidelements are adhered to said substrate by a conductive adhesive whichconducts between said terminal sections and said conductive sections.13. A device according to claim 12, wherein said conductive adhesive isan anisotropic conductive adhesive.
 14. A device according to claim 12,wherein there are plural terminal sections of said elements, and theconductive adhesives to be adhered to these terminal sections are formedin a condition of independence for each of the respective terminalsections, and between the independent conductive adhesives is insulated.15. A device according to claim 14, wherein said conductive adhesivesare in the independent condition by arranging the conductive adhesivesseparated for each of the respective terminal sections, and between theconductive adhesives is insulated.
 16. A device according to claim 14,wherein said conductive adhesives are in the independent condition foreach of the respective terminal sections by separating by an insulativepartition, and between the conductive adhesives is insulated.
 17. Adevice according to claim 14, wherein said conductive adhesives are inthe independent condition for each of the respective terminal sectionsby arranging into respectively independent concavities, and between theconductive adhesives is insulated.
 18. A device obtained by amanufacturing method according to claim
 1. 19. An electro-optic deviceequipped with a device according to claim
 12. 20. An electronicequipment equipped with a device according to claim 12.